GT10J312(Q)
Part Number:
GT10J312(Q)
Product Classification:
Single IGBTs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
IGBT 600V 10A 60W TO220SM
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Resistor Matching Ratio -
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Input Type Standard
- Part Status Obsolete
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Current - Collector (Ic) (Max) 20 A
- Power - Max 60 W
- Reverse Recovery Time (trr) 200 ns
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
- Td (on/off) @ 25°C 400ns/400ns
- Test Condition 300V, 10A, 100Ohm, 15V